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SFH640 датащи(PDF) 1 Page - Siemens Semiconductor Group |
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SFH640 датащи(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 3 page ![]() 5–1 FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Volt- age, BVCER=300 V • Isolation Test Voltage: 5300 VACRMS • Low Coupling Capacitance • High Common Mode Transient Immunity • Phototransistor Optocoupler 6 Pin DIP Package with Base Connection • Field Effect Stable: TRIOS+ • VDE 0884 Available with Option 1 • Underwriters Lab File #E52744 DESCRIPTION The SFH 640 is an optocoupler with very high BVCER, a minimum of 300 volts. It is intended for telecommunications applications or any DC appli- cation requiring a high blocking voltage. The SFH640 is a “better than” replacement for H11D1. *Supplies from this group can't always be guranteed due to unforseeable yield spread. +TRIOS–TRansparent IOn Shield V DE SFH 640 PHOTOTRANSISTOR 5.3 KV TRIOS® HIGH BVCER VOLTAGE OPTOCOUPLER Maximum Ratings (TA=25°C) Emitter Reverse Voltage ...................................................................................6 V DC Forward Current ....................................................................... 60 mA Surge Forward Current (tp ≤10 µs) .................................................. 2.5 A Total Power Dissipation ............................................................... 100 mW Detector Collector-Emitter Voltage ................................................................ 300 V Collector-Base Voltage .....................................................................300 V Emitter-Base Voltage ..........................................................................7 V Collector Current ........................................................................... 50 mA Surge Collector Current (tp ≤1 ms) ............................................... 100 mA Total Power Dissipation ............................................................... 300 mW Package Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046 part 2 Nov. 74) ...................................................... 5300 VACRMS/7500 VACPK Isolation Resistance VIO=500 V, TA=25°C .........................................................................≥10 12 Ω VIO=500 V, TA=100°C.......................................................................≥10 11 Ω Insulation Thickness between Emitter and Detector .................. ≥0.4 mm Creepage .................................................................................................≥7 mm Clearance .................................................................................................≥7 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part1 ................................................... 175 Storage Temperature Range .......................................... -55 °C to +150°C Operating Temperature Range....................................... -55 °C to +100°C Junction Temperature...................................................................... 100 °C Soldering Temperature (max. 10 sec., dip soldering: distance to seating plane ≥1.5 mm) .............................................260°C Dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) Pin One ID 6 5 4 1 2 3 18 ° typ. .300 (7.62) .347 (8.82) 4 ° typ. 1 2 3 6 5 4 Base Collector Emitter Anode Cathode NC |
Аналогичный номер детали - SFH640 |
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Аналогичное описание - SFH640 |
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