DESCRIPTION
The SFH640 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package.
It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
The coupling device is designed for signal transmission between two electrically separated circuits.

FEATURES
• Phototransistor optocoupler in a 6 pin DIP package with base connection
• Very high collector emitter breakdown voltage, BVCEO = 300 V
• Isolation rated voltage: 5000 VRMS
• Low coupling capacitance
• High common m;ode transient immunity
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS
• Telecom
• Industrial controls
• Battery powered equipment
• Office machines
• Programmable controllers