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ZXGD3104 датащи(PDF) 11 Page - Diodes Incorporated |
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ZXGD3104 датащи(HTML) 11 Page - Diodes Incorporated |
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11 / 13 page ![]() ZXGD3104N8 Document Number DS35546 Rev. 1 – 2 11 of 13 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3104N8 Design considerations It is advisable to decouple the ZXGD3104 closely to VCC and ground due to the possibility of high peak gate currents with a 1 μF X7R type ceramic capacitor C1 as shown in Figure 2. Also the ground return loop should be as short as possible. To minimize parasitic inductance-induced premature turn-off of the synchronous controller always keep the PCB track length between ZXGD3104’s Drain input and MOSFET’s Drain to less than 10mm. Low internal inductance SMD MOSFET packages are also recommended for high switching frequency power conversion to minimize MOSFET body diode conduction loss. The Gate pins should be as close to the MOSFET’s gate as possible. External gate resistors are optional. They can be inserted to control the rise and fall time which may help with EMI issues. The careful selection of external resistors RREF and RBIAS is important to the optimum device operation. Select a value for resistor RREF and RBIAS from Table 1 based on the desired Vcc value. This provides the typical ZXGD3104’s detection threshold voltage of -10mV. Table 1. Recommended resistor values for various supply voltages VCC RBIAS RREF 5V 1.6 k Ω 2 k Ω 10V 3.3 k Ω 4.3 k Ω 12V 3.9 k Ω 5.1 k Ω 15V 5.1 k Ω 6.8 k Ω 19V 6.3 k Ω 8.5 k Ω |
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