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ZXGD3104 датащи(PDF) 5 Page - Diodes Incorporated |
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ZXGD3104 датащи(HTML) 5 Page - Diodes Incorporated |
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5 / 13 page ![]() ZXGD3104N8 Document Number DS35546 Rev. 1 – 2 5 of 13 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3104N8 Electrical Characteristics @TA = 25°C unless otherwise specified VCC = 19V; RBIAS = 6.3kΩ; RREF = 8.5kΩ Characteristic Symbol Min Typ Max Unit Test Condition Input and Supply Quiescent current IQ - 5.16 - mA VD ≥ 0V Gate Driver Turn-off Threshold Voltage (Note 9 & 10) VT -16 -10 0 mV VG = 1V Gate output voltage (Note 9 & 10) VG(off) 0 0.73 1.0 V VD ≥ 1V (Note 9 & 11) VG 12.5 14 V CC VD = -50mV 17 18 VCC VD = -100mV Switching Performance for QG(tot) = 124nC (Note 12) Turn-on propagation delay td(rise) 175 250 325 ns - Refer to switching waveforms in Fig. 1 Turn-off propagation delay td(fall) 11 15 20 Gate rise time tr 335 480 625 From 10% of VG to 10V 530 760 990 From 10% to 90% of VG Gate fall time tf 35 50 65 Continuous Conduction Mode Notes: 9.GATEH connected to GATEL 10.RH = 100kΩ, RL = O/C 11.RL = 100kΩ, RH = O/C 12. refer to test circuit below |
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