ADP1879ACPZ-1.0-R7 datasheet(4/40 Pages) AD

4 / 40 page

ADP1878/ADP1879

Data Sheet

Rev. A | Page 4 of 40

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

ADP1878ACPZ-0.6-R7/

ADP1879ACPZ-0.6-R7

600

kHz

On Time

VIN = 5 V, VOUT = 2 V, TJ = 25°C

500

540

605

Minimum On Time

VIN = 20 V, VOUT = 0.8 V

110

Minimum Off Time

65% duty cycle (maximum)

340

400

ADP1878ACPZ-1.0-R7/

ADP1879ACPZ-1.0-R7

1.0

MHz

On Time

VIN = 5 V, VOUT = 2 V, TJ = 25°C

285

312

360

Minimum On Time

VIN = 20 V

Minimum Off Time

45% duty cycle (maximum)

340

400

OUTPUT DRIVER CHARACTERISTICS

High-Side Driver

Output Source Resistance

ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)

2.20

Output Sink Resistance

ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)

0.72

Rise Time2

tr, DRVH

BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 59)

Fall Time2

tf, DRVH

BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 60)

Low-Side Driver

Output Source Resistance

ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)

1.5

2.2

Output Sink Resistance

ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)

0.7

Rise Time2

tr,DRVL

VREG = 5.0 V, CIN = 4.3 nF (see Figure 60)

Fall Time2

tf,DRVL

VREG = 5.0 V, CIN = 4.3 nF (see Figure 59)

Propagation Delays

DRVL Fall to DRVH Rise2

ttpdhDRVH

BST − SW = 4.4 V (see Figure 59)

15.7

DRVH Fall to DRVL Rise2

ttpdhDRVL

BST − SW = 4.4 V (see Figure 60)

SW Leakage Current

ISWLEAK

BST = 25 V, SW = 20 V, VREG = 5 V

110

μA

Integrated Rectifier

Channel Impedance

ISINK = 10 mA

22.3

PRECISION ENABLE THRESHOLD

Logic High Level

VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V

605

634

663

Enable Hysteresis

VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V

COMP VOLTAGE

COMP Clamp Low Voltage

VCOMP(LOW)

Tie EN pin to VREG to enable device

(2.75 V ≤ VREG ≤ 5.5 V)

0.47

COMP Clamp High Voltage

VCOMP(HIGH)

(2.75 V ≤ VREG ≤ 5.5 V)

2.55

COMP Zero Current Threshold

VCOMP_ZCT

(2.75 V ≤ VREG ≤ 5.5 V)

1.10

THERMAL SHUTDOWN

TTMSD

Thermal Shutdown Threshold

Rising temperature

155

°C

Thermal Shutdown Hysteresis

°C

CURRENT LIMIT

Hiccup Current-Limit Timing

COMP = 2.4 V

OVERVOLTAGE AND POWER-

GOOD THRESHOLDS

PGOOD

FB Power-Good Threshold

FBPGD

VFB rising during system power up

542

566

FB Power-Good Hysteresis

FB Overvoltage Threshold

FBOV

VFB rising during overvoltage event, IPGOOD = 1 mA

691

710

FB Overvoltage Hysteresis

PGOOD Low Voltage During Sink

VPGOOD

IPGOOD = 1 mA

143

200

PGOOD Leakage Current

PGOOD = 5 V

100

1 The maximum specified values are with the closed loop measured at 10% to 90% time points (see Figure 59 and Figure 60), CGATE = 4.3 nF, and the high- and low-side

MOSFETs being Infineon BSC042N03MS G.

2 Not automatic test equipment (ATE) tested.

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