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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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Q67100-Q2001 датащи(PDF) 8 Page - Siemens Semiconductor Group |
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Q67100-Q2001 датащи(HTML) 8 Page - Siemens Semiconductor Group |
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8 / 10 page  Semiconductor Group 8 HYM 328020S/GS-50/-60 8M × 32-Bit Early Write Cycle Write command hold time t WCH 8– 10 –ns Write command pulse width t WP 8– 10 –ns Write command setup time t WCS 0– 0–ns 13 Write command to RAS lead time t RWL 13 – 15 – ns Write command to CAS lead time t CWL 13 – 15 – ns Data setup time tDS 0– 0–ns 14 Data hold time tDH 10 – 10 – ns 14 Fast Page Mode Cycle Fast page mode cycle time tPC 35 – 40 – ns CAS precharge time tCP 10 – 10 – ns Access time from CAS precharge tCPA – 30 – 35 ns 7 RAS pulse width tRAS 50 200k 60 200k ns CAS precharge to RAS Delay tRHCP 30 – 35 – ns CAS-before-RAS Refresh Cycle CAS setup time t CSR 10 – 10 – ns CAS hold time t CHR 10 – 10 – ns RAS to CAS precharge time t RPC 5– 5–ns Write to RAS precharge time t WRP 10 – 10 – ns Write hold time referenced to RAS t WRH 10 – 10 – ns AC Characteristics (cont’d) 5)6) T A = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 5 ns Parameter Symbol Limit Values Unit Note -50 -60 min. max. min. max. |
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