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Q67100-Q2001 датащи(PDF) 7 Page - Siemens Semiconductor Group

номер детали Q67100-Q2001
подробное описание детали  8M x 32-Bit Dynamic RAM Module
PDF  10 Pages
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производитель  SIEMENS [Siemens Semiconductor Group]
домашняя страница  http://www.siemens.com/
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Q67100-Q2001 датащи(HTML) 7 Page - Siemens Semiconductor Group

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Semiconductor Group
7
HYM 328020S/GS-50/-60
8M
× 32-Bit
AC Characteristics 5)6)
T
A = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max.
min.
max.
common parameters
Random read or write cycle time
t
RC
90
110
ns
RAS precharge time
t
RP
30
40
ns
RAS pulse width
t
RAS
50
10k
60
10k
ns
CAS pulse width
t
CAS
13
10k
15
10k
ns
Row address setup time
t
ASR
0–
0–ns
Row address hold time
tRAH
8–
10
–ns
Column address setup time
tASC
0–
0–ns
Column address hold time
tCAH
10
15
ns
RAS to CAS delay time
tRCD
18
37
20
45
RAS to column address delay time
tRAD
13
25
15
30
ns
RAS hold time
tRSH
13
15
ns
CAS hold time
tCSH
50
60
ns
CAS to RAS precharge time
tCRP
5–
5–ns
Transition time (rise and fall)
tT
3
50
3
50
ns
7
Refresh period
tREF
–32
32
ms
Read Cycle
Access time from RAS
t
RAC
50
60
ns
8, 9
Access time from CAS
t
CAC
13
15
ns
8, 9
Access time from column address
t
AA
25
30
ns
8,10
Column address to RAS lead time
t
RAL
25
30
ns
Read command setup time
t
RCS
0–
0–ns
Read command hold time
t
RCH
0–
0–ns
11
Read command hold time referenced to
RAS
tRRH
0–
0–ns
11
CAS to output in low-Z
t
CLZ
0–
0–ns
8
Output buffer turn-off delay
t
OFF
0
13
0
15
ns
12



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