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SC401B датащи(PDF) 19 Page - Semtech Corporation |
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SC401B датащи(HTML) 19 Page - Semtech Corporation |
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19 / 32 page ![]() SC401B 19 tion mode operation. Figure 6 shows typical waveforms for the Smart Power Save feature. SmartDriveTM For each DH pulse the DH driver initially turns on the high- side MOSFET at a lower speed, allowing a softer, smooth turn-off of the low-side diode. Once the diode is off and the LX voltage has risen 0.5V above PGND, the SmartDrive circuit automatically drives the high-side MOSFET on at a rapid rate. This technique reduces switching losses while maintaining high efficiency and also avoids the need for snubbers or series resistors in the gate drive. FB threshold High-side Drive (DH) Low-side Drive (DL) VOUT drifts up to due to leakage current flowing into COUT DH and DL off DL turns on when Smart PSAVE threshold is reached Smart Power Save Threshold DL turns off when FB threshold is reached Single DH on-time pulse after DL turn-off VOUT discharges via inductor and low-side MOSFET Normal DL pulse after DH on-time pulse Normal VOUT ripple Figure 6 — Smart Power Save Current Limit Protection The device features programmable current limiting, which is accomplished by using the RDS ON of the lower MOSFET for current sensing. The current limit is set by R ILIM resistor. The R ILIM resistor connects from the ILIM pin to the LXS pin which is also the drain of the low-side MOSFET. When the low-side MOSFET is on, an internal ~10μA current flows from the ILIM pin and through the R ILIM resistor, creating a voltage drop across the resistor. While the low-side MOSFET is on, the inductor current flows through it and creates a voltage across the RDS ON. The voltage across the MOSFET is negative with respect to ground. If this MOSFET voltage drop exceeds the voltage across R ILIM, the voltage at the ILIM pin will be negative and current limit will acti- vate. The current limit then keeps the low-side MOSFET on and will not allow another high-side on-time, until the current in the low-side MOSFET reduces enough to bring the ILIM voltage back up to zero. This method regulates the inductor valley current at the level shown by ILIM in Figure 7. Time IPEAK ILOAD ILIM Figure 7 — Valley Current Limit Setting the valley current limit to 15A results in a peak inductor current of 15A plus peak ripple current. In this situation, the average (load) current through the inductor is 15A plus one-half the peak-to-peak ripple current. The internal 10μA current source is temperature compen- sated at 4100ppm in order to provide tracking with the RDS ON. The R ILIM value is calculated by the following equation. R ILIM = 495 x ILIM x [0.0647 x (5V - VDD) +1] When selecting a value for R ILIM be sure not to exceed the absolute maximum voltage value for the ILIM pin. Note that because the low-side MOSFET with low RDS ON is used for current sensing, the PCB layout, solder connections, and PCB connection to the LX node must be done care- fully to obtain good results. R ILIM should be connected directly to LXS (pin 28). Soft-Start of PWM Regulator SC401B has a programmable soft-start time that is con- trolled by an external capacitor at the SS pin. After the controller meets both UVLO and EN/PSV thresholds, the controller has an internal current source of 3µA flowing through the SS pin to charge the capacitor. During the Applications Information (continued) |
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