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D2TO35 датащи(PDF) 3 Page - Vishay Siliconix

номер детали D2TO35
подробное описание детали  Surface Mounted Power Resistor Thick Film Technology
PDF  5 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

D2TO35 датащи(HTML) 3 Page - Vishay Siliconix

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www.vishay.com
For technical questions, contact: sfer@vishay.com
Document Number: 51058
24
Revision: 19-Jul-11
D2TO35
Vishay Sfernice
Surface Mounted Power Resistor
Thick Film Technology
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHOISE OF THE BOARD
The user must choose the board according to the working conditions of the component (power, room temperature). Maximum
working temperature must not exeed 155 °C. The dissipated power is simply calculated by the following ratio:
P:
Expressed in W
T:
Difference between maximum working temperature and room temperature
RTH (j - c):
Thermal resistance value measured between resistive layer and outer side of the resistor. It is the thermal
resistance of the component: 4.28 °C/W.
RTH (c - a):
Thermal resistance value measured between outer side of the resistor and room temperature. It is the thermal
resistance of the solder layer (according the quality of the soldering) and the thermal resistance of the board.
Example:
RTH (c - a) for D2TO35 power rating 3.5 W at ambient temperature + 25 °C.
Thermal resistance RTH (j - c): 4.28 °C/W
Considering equation (1) we have:
T = 175 °C - 25 °C = 150 °C
RTH (j - c) + RTH (c - a) = T/P = 150/3.5 = 42.8 °C/W
RTH (c - a) = 42.8 °C/W - 4.28 °C/W = 38.52 °C/W
ACCIDENTAL OVERLOAD
In any case the applied voltage must be lower than the maximum overload voltage of 375 V. The values indicated on the graph
below are applicable to resistors in air or mounted onto a board.
Single Pulse:
These informations are for a single pulse on a cold resistor at 25 °C (not already used for a dissipation) and for pulses of 100 ms
maximum duration.
The formula used to calculate E is:
with:
E (J):
Pulse energy
P (W): Pulse power
t (s):
Pulse duration
U (V): Pulse voltage
R (
): Resistor
The energy calculated must be less than that allowed by the graph.
P
T
R
TH (j - c)

R
TH (c - a)

+
---------------------------------------------------------------
1

=
10
-6
10
-5
10
-4
10
-3
10
-2
OVERLOAD DURATION IN s
ENERGY CURVE
0.01
0.1
1
10
10
-7
10
-1
100
EP x t
U
2
R
------- x t
==



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