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BSM35GD120D2 датащи(PDF) 3 Page - Siemens Semiconductor Group

номер детали BSM35GD120D2
подробное описание детали  IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
PDF  9 Pages
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производитель  SIEMENS [Siemens Semiconductor Group]
домашняя страница  http://www.siemens.com/
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BSM35GD120D2 датащи(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
Feb-10-1997
BSM 35 GD 120 D2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 600 V, VGE = 15 V, IC = 35 A
RGon = 39 Ω
td(on)
-
60
120
ns
Rise time
VCC = 600 V, VGE = 15 V, IC = 35 A
RGon = 39 Ω
tr
-
60
120
Turn-off delay time
VCC = 600 V, VGE = -15 V, IC = 35 A
RGoff = 39 Ω
td(off)
-
400
600
Fall time
VCC = 600 V, VGE = -15 V, IC = 35 A
RGoff = 39 Ω
tf
-
50
75
Free-Wheel Diode
Diode forward voltage
IF = 35 A, VGE = 0 V, Tj = 25 °C
IF = 35 A, VGE = 0 V, Tj = 125 °C
VF
-
-
1.9
2.3
-
2.8
V
Reverse recovery time
IF = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
trr
-
0.25
-
µs
Reverse recovery charge
IF = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
-
5
2
-
-
µC



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