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BSM35GD120D2 датащи(PDF) 2 Page - Siemens Semiconductor Group

номер детали BSM35GD120D2
подробное описание детали  IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
PDF  9 Pages
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производитель  SIEMENS [Siemens Semiconductor Group]
домашняя страница  http://www.siemens.com/
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BSM35GD120D2 датащи(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
Feb-10-1997
BSM 35 GD 120 D2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 1.2 mA
VGE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
VGE = 15 V, IC = 35 A, Tj = 25 °C
VGE = 15 V, IC = 35 A, Tj = 125 °C
VCE(sat)
-
-
3.3
2.7
3.9
3.2
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
ICES
-
-
2.4
0.6
-
1
mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V
IGES
-
-
150
nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 35 A
gfs
11
-
-
S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Ciss
-
2
-
nF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Coss
-
0.3
-
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Crss
-
0.14
-



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