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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BFS17S датащи(PDF) 3 Page - Siemens Semiconductor Group |
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BFS17S датащи(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 5 page  Semiconductor Group 3 Dec-18-1996 BFS 17S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics of any single Transistor Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz fT 1.3 1 2.5 1.4 - - GHz Collector-base capacitance VCB = 5 V, f = 1 MHz Ccb - 0.55 0.8 pF Collector-emitter capacitance VCE = 5 V, f = 1 MHz Cce - 0.13 - Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Cibo - 1.45 - Output capacitance VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Cobs - - 1.5 Noise figure IC = 2 mA, VCE = 5 V, f = 800 MHz ZS = 0 Ω F - 3.5 5 dB Transducer gain IC = 8 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.75 GHz | S21e|2 - - 12 18 - - Linear output voltage IC = 14 mA, VCE = 5 V, dim = 60 dB f1 = 806 MHz, f2 = 810 MHz, ZS =ZL= 50 Ω V01=V02 - 100 - mV Third order intercept point IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω IP3 - 23 - dBm |
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