BFS17S datasheet(1/5 Pages) SIEMENS

номер детали	BFS17S

подробное описание детали	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

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производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

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Semiconductor Group

1

Dec-18-1996

BFS 17S

NPN Silicon RF Transistor

• For broadband amplifiers up to 1GHz

at collector currents from 1mA to 20mA

Tape loading orientation

Type

Marking Ordering Code

Pin Configuration

Package

BFS 17S

MCs

Q62702-F1645

1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363

Maximum Ratings of any single Transistor

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCEO

15

V

Collector-base voltage

VCBO

25

Emitter-base voltage

VEBO

2.5

Collector current

IC

25

mA

Peak collector current

f

≥ 10 MHz

ICM

50

Total power dissipation

TS ≤ 83 °C

Ptot

280

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

- 65 + 150

Storage temperature

Tstg

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

RthJS

≤ 240

K/W

1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm

Аналогичный номер детали - BFS17S

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	BFS17S	47Kb / 5P	NPN Silicon RF Transistor Aug-20-2001
	BFS17S	72Kb / 7P	NPN Silicon RF Transistor 2007-03-30
	BFS17S	522Kb / 7P	NPN Silicon RF Transistor 2011-07-20
Motorola, Inc	BFS17S	34Kb / 1P	RF TRANSISTOR
Infineon Technologies A...	BFS17S	72Kb / 7P	NPN Silicon RF Transistor 2007-03-30

More results

Аналогичное описание - BFS17S

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BFP182	60Kb / 7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
	BFP182R	58Kb / 7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
	BFP182W	58Kb / 7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
	BFR182	71Kb / 8P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
	BFR182W	55Kb / 7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
	BFS17P	48Kb / 5P	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
	BFS17W	34Kb / 5P	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
	BFS482	53Kb / 6P	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
	BFT92	57Kb / 7P	PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
	BFT92W	56Kb / 7P	PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)

More results

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Аналогичный номер детали - BFS17S

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