FDN338P datasheet(2/4 Pages) HTSEMI

номер детали	FDN338P

подробное описание детали	20 V P-Channel Enhancement Mode MOSFET

PDF	4 Pages

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производитель	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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ELECTRICAL CHARACTERISTICS

Parameter

Test Condition

Static

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = -250uA

-20

Drain-Source On-State Resistance

R DS(on)

VGS = -4.5V, ID = -1.6A

VGS = -2.5V, ID = -1.3A

116

160

mΩ

Gate Threshold Voltage

VGS(th)

VDS =VGS, ID = -250uA

-0.42

Zero Gate Voltage Drain Current

VDS = -16V, V GS = 0V

-1

Gate Body Leakage

IGSS

VGS = ± 8V, VDS = 0V

±100

Forward Transconductance

gfs

VDS = -5V, ID = -2.8A

6.5

Dynamic

Total Gate Charge

5.8

Gate-Source Charge

Qgs

0.85

Gate-Drain Charge

Qgd

VDS = -6V, ID

-2.8A

VGS = -4.5V

1.7

Turn-On Delay Time

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD = -6V, RL=6Ω

-1.A, VGEN = -4.5V

RG = 6

Input Capacitance

Ciss

415

Output Capacitance

Coss

223

Reverse Transfer Capacitance

Crss

VDS = -6V, VGS = 0V

f = 1.0 MHz

Source-Drain Diode

Max. Diode Forward Current

Diode Forward Voltage

VSD

IS = -1.6A, VGS = 0V

-1.2

Pulse test: pulse width <= 300us, duty cycle<= 2%

IDSS

Ω

-0.8

Symbol

Min.

Max.

Typ.

Unit

-1.6

115

-1.5

20V P-Channel Enhancement Mode MOSFET

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FDN338P

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