BLF888AS datasheet(3/17 Pages) PHILIPS

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BLF888A_BLF888AS

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Product data sheet

Rev. 3 — 30 August 2011

3 of 17

NXP Semiconductors

BLF888A; BLF888AS

UHF power LDMOS transistor

Thermal characteristics

[1]

Rth(j-c) is measured under RF conditions.

Characteristics

[1]

ID is the drain current.

[2]

Capacitance values without internal matching.

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction to case

Tcase =80 C; PL(AV) = 125 W [1] 0.15 K/W

Table 6.

DC characteristics

Tj =25 C; per section unless otherwise specified.

Symbol

Parameter

Conditions

Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage

VGS =0V; ID = 2.4 mA

[1] 110 -

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 240 mA

[1] 1.4

1.9

2.4

IDSS

drain leakage current

VGS =0V; VDS = 50 V

--2.8

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10V

-36

IGSS

gate leakage current

VGS =10V; VDS = 0 V

280

RDS(on)

drain-source on-state resistance

VGS =VGS(th) +3.75 V;

ID =8.5 A

[1] -143 -



Ciss

input capacitance

VGS = 0 V; VDS =50V;

f= 1MHz

[2] -220 -

Coss

output capacitance

VGS = 0 V; VDS =50V;

f= 1MHz

-74

Crss

reverse transfer capacitance

VGS = 0 V; VDS =50V;

f= 1MHz

-1.2

Table 7.

RF characteristics

RF characteristics in NXP production narrowband test circuit; Tcase =25 C unless otherwise

specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

2-Tone, class-AB

VDS

drain-source voltage

IDq

quiescent drain current

[1] -1.3

PL(AV)

average output power

f1 = 860 MHz;

f2 =860.1 MHz

250

power gain

f1 = 860 MHz;

f2 =860.1 MHz



drain efficiency

f1 = 860 MHz;

f2 =860.1 MHz

IMD3

third-order intermodulation distortion

f1 = 860 MHz;

f2 =860.1 MHz

32 28

dBc

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