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BLF888AS датащи(PDF) 8 Page - NXP Semiconductors |
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BLF888AS датащи(HTML) 8 Page - NXP Semiconductors |
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8 / 17 page ![]() BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 August 2011 8 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 7.4 Reliability TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C Fig 9. BLF888A; BLF888AS electromigration (IDS(DC), total device) 001aam586 Years 103 10 102 106 105 104 107 1 IDS(DC) (A) 0 20 16 8 412 2 18 10 614 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) |
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