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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD75211W1723 датащи(PDF) 1 Page - Texas Instruments |
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CSD75211W1723 датащи(HTML) 1 Page - Texas Instruments |
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1 / 8 page  P0114-01 D1 D1 S S D1 G1 G2 S D2 D2 D2 S -VGS - Gate-to-Source Voltage - V 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 TC = 25°C TC = 125°C G006 ID = -2A -VGS - Gate-to-Source Voltage - V 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 TC = 25°C TC = 125°C G013 ID = −2A CSD75211W1723 www.ti.com SLPS250A – MAY 2010 – REVISED AUGUST 2011 Dual P-Channel NexFET ™ Power MOSFET Check for Samples: CSD75211W1723 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage -20 V • Dual P-Ch MOSFETs Qg Gate Charge Total (-4.5V) 4.5 nC • Common Source Configuration Qgd Gate Charge Gate to Drain 0.9 nC • Small Footprint 1.7 mm × 2.3 mm VGS = -1.8V 50 m Ω RDS(on) Drain to Source On Resistance VGS = -2.5V 39 m Ω • Ultra Low Qg and Qgd VGS = -4.5V 32 m Ω • Pb Free VGS(th) Threshold Voltage -0.7 V • RoHS Compliant • Halogen Free Text Added for Spacing ORDERING INFORMATION APPLICATIONS Device Package Media Qty Ship • Battery Management 1.7-mm × 2.3-mm 7-Inch Tape and CSD75211W1723 Wafer Level 3000 Reel Reel • Battery Protection Package • DC-DC Converters Text Added for Spacing ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated VALUE UNIT The device has been designed to deliver the lowest VDS Drain to Source Voltage -20 V on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low VGS Gate to Source Voltage ±8 V profile. Low on resistance and gate charge coupled Continuous Drain Current (1) (2)(3) ID -4.5 A with the small footprint and low profile make the Pulsed Drain Current (1) (2)(3) device ideal for battery operated space constrained Continupus Gate Clamp Current (4) IG -6 A application in load management as well as DC-DC Pulsed Gate Clamp Current (4) converter applications PD Power Dissipation (1) 1.5 W Top View TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range (1) May be limited by Max source current (2) Based on Min Cu footprint (3) Per MOSFET (4) Total for device RDS(on) vs VGS RD1D2(on) vs VGS 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2010–2011, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Аналогичный номер детали - CSD75211W1723_11 |
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Аналогичное описание - CSD75211W1723_11 |
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