CSD75211W1723_11 datasheet(4/8 Pages) TI

номер детали	CSD75211W1723

подробное описание детали	Dual P-Channel NexFET??Power MOSFET

PDF	8 Pages

Scroll/Zoom	100%

производитель	TI [Texas Instruments]

домашняя страница	http://www.ti.com

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4 / 8 page

-VDS - Drain-to-Source Voltage - V

0.3

0.6

0.9

1.2

1.5

VGS = -1.8V

VGS = -2.5V

VGS = -3V

VGS = -3.5V

VGS = -4.5V

G001

-VGS - Gate-to-Source Voltage - V

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

TC = -55°C

TC = 25°C

TC = 125°C

G002

VDS = -5V

Qg - Gate Charge - nC

0.5

1.5

2.5

3.5

4.5

0.5

1.5

2.5

3.5

4.5

0.5

1.5

2.5

3.5

4.5

G003

ID = -2A

VDS = -10V

-VDS - Drain-to-Source Voltage - V

100

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G004

f = 1MHz

VGS = 0V

TC - Case Temperature - °C

-75

-25

125

175

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

G005

ID = -250µA

-VGS - Gate-to-Source Voltage - V

TC = 25°C

TC = 125°C

G006

ID = -2A

CSD75211W1723

SLPS250A

– MAY 2010 – REVISED AUGUST 2011

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

Figure 4. Gate Charge

Figure 5. Capacitance

Figure 6. Threshold Voltage vs. Temperature

Figure 7. RDS(on) vs. Gate-to-Source Voltage

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