IP4302CX2_A

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 28 November 2011

3 of 10

NXP Semiconductors

IP4302CX2/A

Low profile bidirectional ESD protection diode

4.

Limiting values

[1]

Device is qualified with 1000 pulses of

15 kV contact discharges each, according to the IEC 61000-4-2

model and far exceeds the specified level 4 (8 kV contact discharge).

[2]

A special robust test is performed stressing the devices with

 1000 contact discharges according to the

IEC 61000-4-2 model and far exceeds the specified level 4 (8 kV contact discharge).

5.

Characteristics

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

electrostatic

discharge voltage

contact discharge

[1][2]

15

+15

kV

air discharge

15

+15

kV

IEC 61000-4-2 level 4

contact discharge

8+8

kV

air discharge

15

+15

kV

MIL-STD-883D (method 3015) HBM

4+4

kV

junction temperature

-

150

C

ambient temperature

35

+85

C

storage temperature

65

+150

C

Table 5.

Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

reverse leakage current

--20

nA

20

-

-

nA

breakdown voltage

14.0

16.5

-

V

-

16.5 14.0 V

diode capacitance

--10

pF