IP4302CX2_A

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 28 November 2011

2 of 10

NXP Semiconductors

IP4302CX2/A

Low profile bidirectional ESD protection diode

1.4 Quick reference data

[1]

Device is qualified with 1000 pulses of

15 kV contact discharges each, according to the IEC 61000-4-2

model and far exceeds the specified level 4 (8 kV contact discharge).

[2]

A special robust test is performed stressing the devices with

 1000 contact discharges according to the

IEC 61000-4-2 model and far exceeds the specified level 4 (8 kV contact discharge).

2.

Pinning information

[1]

The device is electrically and mechanically symmetrical. Thus no marking is needed.

3.

Ordering information

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

breakdown voltage

14.0

16.5

-

V

-

16.5

14.0

V

diode capacitance

--10

pF

electrostatic discharge

voltage

contact discharge

[1][2]

15

-

+15

kV

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

cathode (diode 1)

[1]

2

cathode (diode 2)

001aao233

A1

(1)

A1

(2)

006aab041

12

Table 3.

Ordering information

Type number Package

Name

Description

Version

IP4302CX2/A

WLCSP2 wafer level chip-size package; 2 bumps (A1-A1)

IP4302CX2/A