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BDX85C датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали BDX85C
подробное описание детали  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX85C датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX85/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A
80V(Min)- BDX85B; 100V(Min)- BDX85C
·Complement to Type BDX86/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX85
45
BDX85A
60
BDX85B
80
VCBO
Collector-Base Voltage
BDX85C
100
V
BDX85
45
BDX85A
60
BDX85B
80
VCEO
Collector-Emitter Voltage
BDX85C
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
B
Base Current
100
mA
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.75
℃/W
isc Website：www.iscsemi.cn


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