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BDX85C датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали BDX85C
подробное описание детали  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX85C датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX85/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDX85
45
BDX85A
60
BDX85B
80
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX85C
IC= 100mA; IB= 0
100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 16mA
B
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 8A; IB= 40mA
B
4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 8A; IB= 80mA
B
4.0
V
VBE(on)
Base-Emitter On Voltage
IC= 4A; VCE= 3V
2.8
V
BDX85
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150℃
0.5
5.0
BDX85A
VCB= 60V; IE= 0
VCB= 60V; IE= 0; TC= 150℃
0.5
5.0
BDX85B
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 150℃
0.5
5.0
ICBO
Collector
Cutoff Current
BDX85C
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150℃
0.5
5.0
mA
BDX85
VCE= 22V; IB= 0
B
BDX85A
VCE= 30V; IB= 0
B
BDX85B
VCE= 40V; IB= 0
B
ICEO
Collector
Cutoff Current
BDX85C
VCE= 50V; IB= 0
B
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0
mA
hFE-1
DC Current Gain
IC= 3A; VCE= 3V
1000
hFE-2
DC Current Gain
IC= 4A; VCE= 3V
750
18000
hFE-3
DC Current Gain
IC= 8A; VCE= 4V
200
isc Website：www.iscsemi.cn
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