2SB817 datasheet(1/4 Pages) ISC

номер детали	2SB817

подробное описание детали	Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB817

DESCRIPTION

・With TO-3PN package

・Complement to type 2SD1047

APPLICATIONS

・140V/12A AF 60W output applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-160

V

VCEO

Collector-emitter voltage

Open base

-140

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current (DC)

-12

A

ICM

Collector current-peak

-15

A

PC

Collector power dissipation

TC=25℃

100

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-40~150

℃

Fig.1 simplified outline (TO-3PN) and symbol

Аналогичный номер детали - 2SB817

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