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2SB817 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали 2SB817
подробное описание детали  Silicon PNP Power Transistors
PDF  4 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB817 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB817 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB817 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SB817 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SB817 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2SB817
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-140
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA ;IE=0
-160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA ;IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-1.1
V
VBE
Base-emitter on voltage
IC=-1A;VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60
200
hFE-2
DC current gain
IC=-6A ; VCE=-5V
20
fT
Transition frequency
IC=-1A ; VCE=-5V
15
MHz
COB
Collector output capacitance
IE=0;f=1MHz;VCB=10V
300
pF
Switching times
ton
Turn-on time
0.25
μs
tstg
Storage time
1.61
μs
tf
Fall time
IC=-1.0A IB1=-IB2=-0.1A
0.53
μs
hFE-1 Classifications
D
E
60-120
100-200



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