2N5597 datasheet(1/3 Pages) ISC

номер детали	2N5597

подробное описание детали	Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5597 2N5599 2N5601 2N5603

DESCRIPTION

・With TO-66 package

・Excellent safe operating area

・Low collector saturation voltage

APPLICATIONS

・For high frequency power amplifier ;

audio power amplifier and drivers.

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5597

-80

2N5599/5601

-100

VCBO

Collector-base voltage

2N5603

Open emitter

-120

V

2N5597

-60

2N5599/5601

-80

VCEO

Collector-emitter voltage

2N5603

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-2

A

PD

Total power dissipation

TC=25℃

20

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

4.37

℃/W

Fig.1 simplified outline (TO-66) and symbol

Аналогичный номер детали - 2N5597

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Seme LAB	2N5597	11Kb / 1P	Bipolar PNP Device in a Hermetically sealed TO66 Metal Package
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