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LH28F008SC датащи(PDF) 7 Page - Sharp Corporation

номер детали LH28F008SC
подробное описание детали  8M (1M 횞 8) Flash Memory
PDF  38 Pages
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производитель  SHARP [Sharp Corporation]
домашняя страница  http://sharp-world.com/
Logo SHARP - Sharp Corporation

LH28F008SC датащи(HTML) 7 Page - Sharp Corporation

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8M (1M × 8) Flash Memory
LH28F008SC
7
Write
Writing commands to the CUI enable reading of
device data and identifier codes. They also control
inspection and clearing of the status register. When
VPP =VPPH1/2/3, the CUI additionally controls block era-
sure, byte write, and lock-bit configuration.
The Block Erase command requires appropriate com-
mand data and an address within the block to be erased.
The Byte Write command requires the command and
address of the location to be written. Set Master and
Block Lock-Bit commands require the command and
address within the device (Master Lock) or block within
the device (Block Lock) to be locked. The Clear Block
Lock-Bits command requires the command and address
within the device.
The CUI does not occupy an addressable memory
location. It is written when WE
  » and CE  » are active. The
address and data needed to execute a command are
latched on the rising edge of WE
  » or CE  » (whichever
goes high first). Standard microprocessor write timings
are used. Figures 16 and 17 illustrateWE
  » and CE  » con-
trolled write operations.
COMMAND DEFINITIONS
When the VPP voltage ≤ VPPLK, Read operations
from the status register, identifier codes, or blocks are
enabled. Placing VPPH1/2/3 on VPP enables successful
block erase, byte write and lock-bit configuration
operations.
Device operations are selected by writing specific
commands into the CUI.The Command DefinitionsTable
defines these commands.
Read Array Command
Upon initial device power-up and after exit from deep
power-down mode, the device defaults to read array
mode.This operation is also initiated by writing the Read
Array command. The device remains enabled for reads
until another command is written. Once the internal
WSM has started a block erase, byte write or lock-bit
configuration, the device will not recognize the Read
Array command until the WSM completes its operation
unless the WSM is suspended via an Erase Suspend
or Byte Write Suspend command.The Read Array com-
mand functions independently of the VPP voltage and
RP
  » can be VIH or VHH.
00000
00001
10000
10001
1FFFF
10003
10004
F0001
F0002
F0000
FFFFF
F0003
F0004
10002
00002
00003
00004
0FFFF
BLOCK 15 LOCK CONFIGURATION CODE
(BLOCKS 2 THROUGH 14)
BLOCK 1 LOCK CONFIGURATION CODE
RESERVED FOR
FUTURE IMPLEMENTATION
RESERVED FOR
FUTURE IMPLEMENTATION
RESERVED FOR
FUTURE IMPLEMENTATION
RESERVED FOR
FUTURE IMPLEMENTATION
RESERVED FOR
FUTURE IMPLEMENTATION
MASTER LOCK CONFIGURATION CODE
BLOCK 0 LOCK CONFIGURATION CODE
DEVICE CODE
MANUFACTURER CODE
BLOCK 0
BLOCK 1
BLOCK 15
28F008SC-5
Figure 5. Device Identifier Code Memory Map



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