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LH28F008SC датащи(PDF) 7 Page - Sharp Corporation |
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LH28F008SC датащи(HTML) 7 Page - Sharp Corporation |
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7 / 38 page ![]() 8M (1M × 8) Flash Memory LH28F008SC 7 Write Writing commands to the CUI enable reading of device data and identifier codes. They also control inspection and clearing of the status register. When VPP =VPPH1/2/3, the CUI additionally controls block era- sure, byte write, and lock-bit configuration. The Block Erase command requires appropriate com- mand data and an address within the block to be erased. The Byte Write command requires the command and address of the location to be written. Set Master and Block Lock-Bit commands require the command and address within the device (Master Lock) or block within the device (Block Lock) to be locked. The Clear Block Lock-Bits command requires the command and address within the device. The CUI does not occupy an addressable memory location. It is written when WE » and CE » are active. The address and data needed to execute a command are latched on the rising edge of WE » or CE » (whichever goes high first). Standard microprocessor write timings are used. Figures 16 and 17 illustrateWE » and CE » con- trolled write operations. COMMAND DEFINITIONS When the VPP voltage ≤ VPPLK, Read operations from the status register, identifier codes, or blocks are enabled. Placing VPPH1/2/3 on VPP enables successful block erase, byte write and lock-bit configuration operations. Device operations are selected by writing specific commands into the CUI.The Command DefinitionsTable defines these commands. Read Array Command Upon initial device power-up and after exit from deep power-down mode, the device defaults to read array mode.This operation is also initiated by writing the Read Array command. The device remains enabled for reads until another command is written. Once the internal WSM has started a block erase, byte write or lock-bit configuration, the device will not recognize the Read Array command until the WSM completes its operation unless the WSM is suspended via an Erase Suspend or Byte Write Suspend command.The Read Array com- mand functions independently of the VPP voltage and RP » can be VIH or VHH. 00000 00001 10000 10001 1FFFF 10003 10004 F0001 F0002 F0000 FFFFF F0003 F0004 10002 00002 00003 00004 0FFFF BLOCK 15 LOCK CONFIGURATION CODE (BLOCKS 2 THROUGH 14) BLOCK 1 LOCK CONFIGURATION CODE RESERVED FOR FUTURE IMPLEMENTATION RESERVED FOR FUTURE IMPLEMENTATION RESERVED FOR FUTURE IMPLEMENTATION RESERVED FOR FUTURE IMPLEMENTATION RESERVED FOR FUTURE IMPLEMENTATION MASTER LOCK CONFIGURATION CODE BLOCK 0 LOCK CONFIGURATION CODE DEVICE CODE MANUFACTURER CODE BLOCK 0 BLOCK 1 BLOCK 15 28F008SC-5 Figure 5. Device Identifier Code Memory Map |
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