DMC4040SSD

Document number: DS32120 Rev. 2 - 2

4 of 11

www.diodes.com

March 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMC4040SSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

40

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1.0

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

0.8

1.3

1.8

V

Static Drain-Source On-Resistance (Note 8)

⎯

0.013

0.025

Ω

0.028

0.040

Forward Transconductance (Notes 8 & 9)

⎯

12.6

⎯

S

Diode Forward Voltage (Note 8)

⎯

0.7

1.0

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

⎯

1790

⎯

pF

f= 1MHz

Output Capacitance

⎯

160

⎯

Reverse Transfer Capacitance

⎯

120

⎯

Gate Resistance

⎯

1.03

⎯

Ω

Total Gate Charge (Note 10)

⎯

16.0

⎯

nC

Total Gate Charge (Note 10)

⎯

37.6

⎯

Gate-Source Charge (Note 10)

⎯

7.8

⎯

Gate-Drain Charge (Note 10)

⎯

6.6

⎯

Turn-On Delay Time (Note 10)

⎯

8.1

⎯

ns

Turn-On Rise Time (Note 10)

⎯

15.1

⎯

Turn-Off Delay Time (Note 10)

⎯

24.3

⎯

Turn-Off Fall Time (Note 10)

⎯

5.3

⎯

Notes:

8. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.

Typical Characteristics – Q1 N-Channel

0

5

10

15

20

25

30

0

0.5

1

1.5

2

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 3.5V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 4.0V

GS

V

= 4.5V

GS

V

= 8.0V

GS

0

5

10

15

20

25

30

01

2

3

45

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

DS