DMC4040SSD

Document number: DS32120 Rev. 2 - 2

2 of 11

www.diodes.com

March 2011

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Diodes Incorporated

DMC4040SSD

Characteristic

Symbol

N-Channel - Q1

P-Channel - Q2

Unit

Drain-Source Voltage

40

-40

V

Gate-Source Voltage

±20

±20

Continuous Drain Current

(Notes 3 & 5)

7.5

-7.5

A

5.8

-5.8

(Notes 2 & 5)

5.7

-5.7

(Notes 2 & 6)

6.8

-6.8

Pulsed Drain Current

(Notes 4 & 5)

29.0

-29.0

Continuous Source Current (Body diode)

(Notes 3 & 5)

3.0

-3.0

Pulsed Source Current (Body diode)

(Notes 4 & 5)

29.0

-29.0

Characteristic

Symbol

N-Channel - Q1

P-Channel - Q2

Unit

Power Dissipation

Linear Derating Factor

(Notes 2 & 5)

1.25

10

W

mW/

°C

(Notes 2 & 6)

1.8

14.3

(Notes 3 & 5)

2.14

17.2

Thermal Resistance, Junction to Ambient

(Notes 2 & 5)

100

°C/W

(Notes 2 & 6)

70

(Notes 3 & 5)

58

Thermal Resistance, Junction to Lead

(Notes 5 & 7)

51

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t

≤ 10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).