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SC1109CSTR датащи(PDF) 11 Page - Semtech Corporation |
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SC1109CSTR датащи(HTML) 11 Page - Semtech Corporation |
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11 / 17 page ![]() SYNCHRONOUS PWM CONTROLLER WITH DUAL LOW DROPOUT REGULATOR CONTROLLERS © 2000 SEMTECH CORP. PRELIMINARY - October 16, 2000 SC1109 11 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com Mosfet gate drive can be provided by an external 12V supply that is connected from BST to GND. The actual gate to source voltage of the upper Mosfet will approximately equal 7V (12V-VCC). If the external 12V supply is not available, a classical boot strap technique can be implemented from the VCC supply. A boot strap capacitor is connected from BST to Phase while VCC is connected through a diode (Schottky or other fast low VF diode) to the BST. This will provide a gate to source voltage approximately to VCC-Vdiode drop. Shoot through control circuitry provides a 100ns dead time to ensure both upper and lower MOSFET will not turn on simultaneously and cause a shoot through condition. OVER CURRENT Upper Mosfet’s Rdson is used to monitor the drop across the top FET due to an over current condition. This Method of current sensing minimizes any unnec- essary losses due to external sense resistance. An internal comparator with a 200mV reference moni- tors the Drop across the upper FET, Once the Vdson of the Mosfet exceeds the 200mV limit, the low side gate is turned on and the upper FET is turned off. Also an internal latch is set and the Soft start capaci- tor is discharged. Once the lower threshold of the soft start circuit is crossed, the same Softstart sequence mentioned previously is repeated. This sequence is repeated until the over condition is removed. GATE DRIVERS The Low side gate driver is supplied from VCC and provide a peak source/sink current of and 500mA. The high side gate drive is also capable of sourcing and sinking peak currents of 500mA. The high side Lower Gate PhaseNode Lower Gate Upper Gate Lower Gate PhaseNode Vtt Shorted Upper Gate Lower Gate |
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