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L6738 датащи(PDF) 21 Page - STMicroelectronics |
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L6738 датащи(HTML) 21 Page - STMicroelectronics |
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21 / 32 page ![]() L6738 High current embedded drivers Doc ID 18133 Rev 1 21/32 Two main terms contribute in the device power dissipation: bias power and drivers' power. ● Device Power (PDC) depends on the static consumption of the device through the supply pins and it is simply quantifiable as follows: ● Drivers' power is the power needed by the driver to continuously switch ON and OFF the external MOSFETs; it is a function of the switching frequency and total gate charge of the selected MOSFETs. It can be quantified considering that the total power PSW, dissipated to switch the MOSFETs, is dissipated by three main factors: external gate resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. This last term is the important one to be determined to calculate the device power dissipation. The total power dissipated to switch the MOSFETs for each phase featuring embedded driver results: where QGHS is the total gate charge of the HS MOSFETs and QGLS is the total gate charge of the LS MOSFETs. P DC V CC I CC V VCCDR I VCCDR ⋅ + ⋅ = P SW F SW Q GHS VCCDR ⋅ Q GLS VCCDR ⋅ + () ⋅ = |
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