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L6728D датащи(PDF) 18 Page - STMicroelectronics

номер детали L6728D
подробное описание детали  Single-phase PWM controller with Power Good
PDF  33 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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L6728D датащи(HTML) 18 Page - STMicroelectronics

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Application details
L6728D
18/33
Doc ID 16498 Rev 1
b)
Place FZ1 below FLC (typically 0.5*FLC):
c)
Place FP1 at FESR:
d)
Place FZ2 at FLC and FP2 at half of the switching frequency:
e)
Check that the compensation network gain is lower than open loop EA gain before
F0dB
f)
Check the phase margin obtained (it should be greater than 45°) and repeat if
necessary.
10.2
Layout guidelines
The L6728D provides control functions and high current integrated drivers to implement
high-current step-down DC-DC converters. In this type of application, a good layout is very
important.
The first priority when placing components for these applications must be reserved for the
power section, minimizing the length of each connection and loop as much as possible. To
minimize noise and voltage spikes (EMI and losses) power connections (highlighted in
Figure 7) must be a part of a power plane and in any case constructed with wide and thick
copper traces. The loop must be minimized. The critical components, i.e. the power
MOSFETs, must be close to each other. The use of multi-layer printed circuit boards is
recommended.
The input capacitance (CIN), or at least a portion of the total capacitance needed, must be
placed close to the power section in order to eliminate the stray inductance generated by the
copper traces. Low ESR and ESL capacitors are preferred. MLCC are suggested to be
connected near the HS drain.
Use the appropriate number of VIAs when power traces have to move between different
planes on the PCB in order to reduce both parasitic resistance and inductance. Moreover,
reproducing the same high-current trace on more than one PCB layer reduces the parasitic
resistance associated with that connection.
Connect output bulk capacitors (COUT) as near as possible to the load, minimizing parasitic
inductance and resistance associated with the copper trace, and also adding extra
decoupling capacitors along the way to the load when this results in being far from the bulk
capacitor bank.
C
F
1
π R
F
F
LC
⋅⋅
-----------------------------
=
C
P
C
F
2
π R
F
C
F
F
ESR
1
⋅⋅
----------------------------------------------------------
=
R
S
R
FB
F
SW
2F
LC
------------------
1
---------------------------
=
C
S
1
π R
S
F
SW
⋅⋅
-------------------------------
=



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