FIP4F8S datasheet(6/33 Pages) FUJI

6 / 33 page

AN-087E Rev.1.0

April-2011

FA5526/5527/5528/5536/5537/5538

Fuji Electric Co., Ltd.

http://www.fujielectric.co.jp/products/semiconductor/

6. Line-up of FA5526/27/28/36/37/38 series

Type

Switching Frequency (kHz)

Over Current Protection

Package

FA5526P/N

130 (typ.)

Latch with adjustable delay time

DIP-8/SO-8

FA5527P/N

100 (typ.)

Latch with adjustable delay time

DIP-8/SO-8

FA5528P/N

60 (typ.)

Latch with adjustable delay time

DIP-8/SO-8

FA5536P/N

130 (typ.)

Auto-Recovery

DIP-8/SO-8

FA5537P/N

100 (typ.)

Auto-Recovery

DIP-8/SO-8

FA5538P/N

60 (typ.)

Auto-Recovery

DIP-8/SO-8

7. Ratings and characteristics

＊In defining a current, “＋” represents a sink current and “－” a source current.

(1) Absolute maximum ratings

Item

Symbol

Rating

Unit

Low impedance source

(Icc>15mA)

VCC1

Supply

voltage

Built-in Zener clamp

(Icc<15mA)

VCC2

Self Limiting

IOH

-0.3

OUT pin peak current

IOL

+0.6

OUT pin voltage

VOUT

-0.3

to VCC+0.3

FB/ IS pin voltage

VLT

-0.3

to 5.0

CS pin sink current

ICS

2.0

CS pin minimum voltage

VCSL

-0.3

VH pin Voltage

VVH

-0.3

to 500

Total power dissipation (Ta=25℃)

800 (DIP-8)

400 (SO-8)

Ambient temperature

-30

to +85

degree

Maximum junction temperature

125

degree

Storage temperature

Tstg

-40

to +150

degree

Permissible power dissipation decreasing characteristics

-30

125

400mW(SO)

800mW(DIP)

Ambient temperature Ta (

℃ )

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