MMBTA13 datasheet(2/3 Pages) SECOS

номер детали	MMBTA13

подробное описание детали	Darlington Amplifier Transistor NPN Silicon

PDF	3 Pages

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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2 / 3 page

Any changing of specification will not be informed individual

MMBTA13

MMBTA14

Darlington Amplifier Transistor NPN Silicon

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

100

200

500

Figure 2. Noise Current

f, FREQUENCY (Hz)

Figure 3. Total Wideband Noise Voltage

RS, SOURCE RESISTANCE (kΩ)

Figure 4. Wideband Noise Figure

RS, SOURCE RESISTANCE (kΩ)

5.0

100

200

1.0

50 100 200 500 1k 2k

5k 10k 20k 50k 100k

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

BANDWIDTH = 1.0 Hz

RS ≈ 0

IC = 1.0 mA

100 µA

10 µA

BANDWIDTH = 1.0 Hz

IC = 1.0 mA

100 µA

10 µA

2.0

5.0

100 200

500 1000

BANDWIDTH = 10 Hz TO 15.7 kHz

IC = 10 µA

100 µA

1.0 mA

8.0

6.0

4.0

1.0

2.0

5.0

50 100

200

500 1000

2.0

BANDWIDTH = 10 Hz TO 15.7 kHz

10 µA

100 µA

IC = 1.0 mA

10 20

50 100 200 500 1k 2k

5k 10k 20k 50k 100k

Figure 5. Thermal Response

t, TIME (ms)

1.0

2.0

5.0

1.0

0.5

0.2

0.1

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

200

500

100

1.0k

2.0k

5.0k 10k

D = 0.5

0.2

0.1

0.05

SINGLE PULSE

ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t)

ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t)

01-Jun-2004 Rev. B

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