MMBTA13 datasheet(1/3 Pages) SECOS

номер детали	MMBTA13

подробное описание детали	Darlington Amplifier Transistor NPN Silicon

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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Any changing of specification will not be informed individual

MMBTA13

MMBTA14

Darlington Amplifier Transistor NPN Silicon

K

J

C

H

L

A

B S

G

V

3

1

2

1

2

3

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

http://www.SeCoSGmbH.com

Elektronische Bauelemente

COLLECTOR 3

BASE 1

EMITTER 2

FEATURES

Power dissipation

PCM :

0.3W（Tamb=25℃）

Collector current

ICM :

0.3A

Collector-base voltage

V(BR)CBO : 30V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100μA， IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 100uA， IB=0

30

V

Collector-emitter breakdown voltage

V(BR)EBO

IE= 100μA， Ic=0

10

V

Collector cut-off current

ICBO

VCB=30 V , IE=0

0.1

μ

A

Emitter cut-off current

IEBO

VEB= 10V ,

IC=0

0.1

μ

A

hFE(1) *

VCE=5V, IC= 10mA

MMBTA13

MMBTA14

5000

10000

DC current gain

hFE(2) *

VCE=5V, IC= 100mA

MMBTA13

MMBTA14

10000

20000

Collector-emitter saturation voltage

VCE (sat) *

IC=100 mA, IB=0.1mA

1.5

V

Base-emitter voltage

VBE *

VCE=5V,IC= 100mA

2.0

V

Transition frequency

fT

VCE=5V, IC= 10mA

f=100MHz

125

MHz

* Pulse Test : pulse width≤300μs，duty cycle≤2%。

Marking : MMBTA13:K2D；MMBTA14：K3D

D

01-Jun-2004 Rev. B

Page 1 of 3

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

Аналогичный номер детали - MMBTA13

производитель	номер детали	датащи	подробное описание детали
Transys Electronics	MMBTA13	139Kb / 1P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Samsung semiconductor	MMBTA13	26Kb / 1P	NPN (DARLINGTON AMPLIFIER TRANSISTOR)
Fairchild Semiconductor	MMBTA13	605Kb / 13P	NPN Darlington Transistor
Diodes Incorporated	MMBTA13	47Kb / 2P	NPN SURFACE MOUNT DARLINGTON TRANSISTOR DS30047 Rev. 4 - 2
KEC(Korea Electronics)	MMBTA13	65Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR)

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Аналогичное описание - MMBTA13

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NTE Electronics	NTE265	23Kb / 2P	Silicon NPN Transistor Darlington Power Amplifier
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Samsung semiconductor	MMBTA13	26Kb / 1P	NPN (DARLINGTON AMPLIFIER TRANSISTOR)
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