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MPC5645B датащи(PDF) 64 Page - Freescale Semiconductor, Inc |
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MPC5645B датащи(HTML) 64 Page - Freescale Semiconductor, Inc |
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64 / 114 page ![]() MPC5646C Microcontroller Data Sheet, Rev. 3 Preliminary—Subject to Change Without Notice Freescale Semiconductor 64 4.11.2 Electromagnetic interference (EMI) The product is monitored in terms of emission based on a typical application. This emission test conforms to the IEC61967-1 standard, which specifies the general conditions for EMI measurements. 4.11.3 Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. 4.11.3.1 Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts (n+1) supply pin). This test conforms to the AEC-Q100-002/-003/-011 standard. Table 31. EMI radiated emission measurement1,2 1 EMI testing and I/O port waveforms per IEC 61967-1, -2, -4. 2 For information on conducted emission and susceptibility measurement (norm IEC 61967-4), please contact your local marketing representative. Symbol C Parameter Conditions Value Unit Min Typ Max — SR — Scan range — 0.150 1000 MHz fCPU SR — Operating frequency — — 120 — MHz VDD_LV SR — LV operating voltages — — 1.28 — V SEMI CC T Peak level VDD = 5V, TA =25°C, LQFP176 package Test conforming to IEC 61967-2, fOSC = 40 MHz/fCPU = 120 MHz No PLL frequency modulation — — 18 dBµV ± 2% PLL frequency modulation —— 143 3 All values need to be confirmed during device validation. dBµV Table 32. ESD absolute maximum ratings1,2 1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. Symbol Ratings Conditions Class Max value3 3 Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (Human Body Model) TA = 25 °C conforming to AEC-Q100-002 H1C 2000 V VESD(MM) Electrostatic discharge voltage (Machine Model) TA = 25 °C conforming to AEC-Q100-003 M2 200 VESD(CDM) Electrostatic discharge voltage (Charged Device Model) TA = 25 °C conforming to AEC-Q100-011 C3A 500 750 (corners) |
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