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MPC5645B датащи(PDF) 59 Page - Freescale Semiconductor, Inc |
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MPC5645B датащи(HTML) 59 Page - Freescale Semiconductor, Inc |
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59 / 114 page ![]() MPC5646C Microcontroller Data Sheet, Rev. 3 Preliminary—Subject to Change Without Notice Freescale Semiconductor 59 Table 24. Low voltage power domain electrical characteristics Symbol C Parameter Conditions1 1 V DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified All temperatures are based on an ambient temperature. Value Unit Min Typ2 2 Target typical current consumption for the following typical operating conditions and configuration. Process = typical, Voltage = 1.2 V. Max3 3 Target maximum current consumption for mode observed under typical operating conditions. Process = Fast, Voltage = 1.32 V. IDDMAX 4 4 Running consumption is given on voltage regulator supply (V DDREG). It does not include consumption linked to I/Os toggling. This value is highly dependent on the application. The given value is thought to be a worst case value with all cores and peripherals running, and code fetched from code flash while modify operation on-going on data flash. It is to be noticed that this value can be significantly reduced by application: switch-off not used peripherals (default), reduce peripheral frequency through internal prescaler, fetch from RAM most used functions, use low power mode when possible. CC D RUN mode maximum average current — — 210 3005,6 5 Higher current may sunk by device during power-up and standby exit. Please refer to in rush current in Table 22. 6 Maximum “allowed” current is package dependent. mA IDDRUN CC T RUN mode typical average current7 7 Only for the “P” classification: Code fetched from RAM: Serial IPs CAN and LIN in loop back mode, DSPI as Master, PLL as system Clock (4 x Multiplier) peripherals on (eMIOS/CTU/ADC) and running at max frequency, periodic SW/WDG timer reset enabled. RUN current measured with typical application with accesses on both code flash and RAM. at 120 MHz TA = 25 °C — 1758,9 8 Subject to change, Configuration: 1 e200z4d + 4 kbit/s Cache, 1 eDMA (32 ch), 4 FlexCAN (2 500 kbit/s, 2 125 kbit/s), 10 LINFlexD (20 kbit/s), 8 DSPI (4 2 Mbit/s, 3 4Mbit/s, 1 10 Mbit/s), 40 PWM (200 Hz), 40 ADC Input, 1 CTU (40 ch.), 1 FlexRay (2 ch., 10 Mbit/s), 1 RTC, 4 PIT, 1 SWT, 1 STM. Ethernet and e200z0h disabled. Also reduced timed I/O channels for smaller packages. RUN current measured with typical application with accesses on both code flash and RAM. 2409,10 mA Tat 80 MHz TA = 25 °C 1108 15010 mA IDDHALT CC P HALT mode current11 — — 25 35 mA IDDSTOP CC P STOP mode current12 No clocks active TA = 25 °C — 4009 12009,13 µA PTA = 150 °C — 109 309 mA IDDSTDBY3 (96 KB RAM retained) CC P STANDBY3 mode current14 No clocks active TA = 25 °C — 60 175 µA PTA = 150 °C — 1000 3000 µA IDDSTDBY2 (64 KB RAM retained) CC P STANDBY2 mode current15 No clocks active TA = 25 °C — 45 135 µA PTA = 150 °C — 800 2000 µA IDDSTDBY1 (8 KB RAM retained) CC T STANDBY1 mode current16 No clocks active TA = 25 °C — 25 75 µA PTA = 150 °C — 500 1000 µA Adders in LP mode CC T 32 kHz OSC — TA =25°C — — 5 µA 4–40 MHz OSC — TA =25°C — — 3 mA 16 MHz IRC — TA =25°C — — 500 µA 128 kHz IRC — TA =25°C — — 5 µA |
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