BFS17P datasheet(1/7 Pages) INFINEON

номер детали	BFS17P

подробное описание детали	NPN Silicon RF Transistor

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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2007-03-30

1

BFS17P

1

2

3

NPN Silicon RF Transistor

• For broadband amplifiers up to 1 GHz at

collector currents from 1 mA to 20 mA

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFS17P

MCs

1 = B

2 = E

3 = C

SOT23

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

15

V

Collector-base voltage

VCBO

25

Emitter-base voltage

VEBO

2.5

Collector current

IC

25

mA

Peak collector current

ICM

50

Total power dissipation2)

TS ≤ 55 °C

Ptot

280

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point3)

RthJS

≤ 340

K/W

1Pb-containing package may be available upon special request

2TS is measured on the collector lead at the soldering point to the pcb

3For calculation of RthJA please refer to Application Note Thermal Resistance

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