BFS17P datasheet(3/7 Pages) INFINEON

номер детали	BFS17P

подробное описание детали	NPN Silicon RF Transistor

PDF	7 Pages

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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3 / 7 page

2007-03-30

BFS17P

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 2 mA, VCE = 5 V, f = 200 MHz

IC = 25 mA, VCE = 5 V, f = 200 MHz

1.3

1.4

2.5

GHz

Collector-base capacitance

VCB = 5 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

0.55

0.8

Collector emitter capacitance

VCE = 5 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

0.27

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

0.9

1.45

Noise figure

IC = 2 mA, VCE = 5 V, ZS = 50 Ω,

f = 800 MHz

3.5

Transducer gain

IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω,

f = 500 MHz

|S21e|2

Third order intercept point at output

VCE = 5 V, IC = 20 mA, f = 800 MHz,

ZS = ZSopt, ZL = ZLopt

IP3

21.5

dBm

1dB Compression point

IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω,

f = 800 MHz

P-1dB

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