NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00111B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF240 ___ ___

____

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│

│

│

│

│

│

│

│

└

│

│

│

│

│

└

└

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Pin Configuration

__ = Normal

R = Reverse

J = TO-257

SFF240J

SFF240JR

15 AMP, 200 Volts, 0.18 Ω

N-Channel Power MOSFET

Features:



Rugged construction with polysilicon gate



Low RDS(on) and high transconductance



Excellent high temperature stability



Very fast switching speed



Fast recovery and superior dv/dt performance



Increased reverse energy capability



Low input and transfer capacitance for easy

paralleling



Ceramic seals for improved hermeticity



Hermetically sealed package



TX, TXV, S-Level screening available



Replaces: IRFY240 and 2N7219 Types

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

200

V

Gate - Source Voltage

continuous

transient

±20

±30

V

Max. Continuous Drain Current (package

limited) @ 25ºC

15

A

Max. Instantaneous Drain Current (Tj limited)

16

A

Max. Avalanche current

@ L = 0.1 mH

15

A

Single Pulse Avalanche Energy

@ L = 0.1 mH

450

mJ

Total Power Dissipation

63

48

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

(Junction to Case)

2

ºC/W

NOTES:

TO-257

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Maximum current limited by package configuration

4/ Unless otherwise specified, all electrical characteristics @25