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SFF240JR датащи(PDF) 2 Page - Solid States Devices, Inc

номер детали SFF240JR
подробное описание детали  N-Channel Power MOSFET
PDF  3 Pages
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производитель  SSDI [Solid States Devices, Inc]
домашняя страница  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

SFF240JR датащи(HTML) 2 Page - Solid States Devices, Inc

  SFF240JR Datasheet HTML 1Page - Solid States Devices, Inc SFF240JR Datasheet HTML 2Page - Solid States Devices, Inc SFF240JR Datasheet HTML 3Page - Solid States Devices, Inc  
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NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00111B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF240J
SFF240JR
Electrical Characteristics4/
Symbol
Min
Typ
Max Units
Drain to Source Breakdown Voltage
VGS = 0V, ID = 1 mA
BVDSS
200
220
––
V
Drain to Source On State Resistance
VGS = 10V, ID = 10A, Tj = 25
oC
VGS = 10V, ID = 10A, Tj =125
oC
VGS = 10V, ID = 18A, Tj = 25
oC
RDS(on)
––
––
––
0.13
0.25
0.135
0.18
––
0.25
Ω
On State Drain Current
VDS > ID(on) x RDS(on) Max, VGS = 10V, Tj = 25
oC
ID(on)
15
––
––
A
Gate Threshold Voltage
VDS = VGS, ID = 250µA, Tj = 25
oC
VDS = VGS, ID = 250µA, Tj = 125
oC
VDS = VGS, ID = 250µA, Tj = -55
oC
VGS(th)
2.0
––
––
3.0
2.2
3.5
4.0
––
––
V
Forward Transconductance
VDS ≥ 10V, IDS = 10A, Tj = 25
oC
gfs
6.5
10
––
S(Ʊ)
Zero Gate Voltage
Drain Current
VDS = max rated voltage, VGS = 0V, Tj = 25
oC
VDS = max rated voltage, VGS = 0V, Tj = 125
oC
IDSS
––
––
0.02
10
25
250
μA
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS, Tj = 25
oC
IGSS1
––
––
10
10
100
-100
nA
At rated VGS, Tj = 125
oC
IGSS2
––
––
10
10
200
-200
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V
VDS= 100V
Rated ID
Qg
Qgs
Qgd
––
––
––
50
12
30
60
15
38
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
VDD = 100 V
ID= 15 A
RG = 9.1Ω
VGS = 10 V
td(on)
tr
td(off)
tf
––
––
––
––
25
15
50
10
35
90
60
65
nsec
Diode Forward Voltage
IS = Rated ID, VGS = 0V, Tj = 25
oC
VSD
––
––
2.0
V
Diode Reverse Recovery Time
Reverse Recovery Charge
Tj = 25
oC, I
F = Rated ID, di/dt = 100A/usec
trr
Qrr
––
––
290
2.6
500
5.3
nsec
μC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Ciss
Coss
Crss
––
––
––
1200
450
150
––
––
––
pF



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