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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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R5F2L357CDFP датащи(PDF) 6 Page - Renesas Technology Corp |
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R5F2L357CDFP датащи(HTML) 6 Page - Renesas Technology Corp |
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6 / 75 page  R8C/L35C Group, R8C/L36C Group, R8C/L38C Group, R8C/L3AC Group 1. Overview R01DS0095EJ0101 Rev.1.01 Page 6 of 72 Apr 15, 2011 Table 1.6 Specifications (3) Note: 1. Specify the D version if D version functions are to be used. Item Specification Flash Memory • Programming and erasure voltage: VCC = 2.7 to 5.5 V • Programming and erasure endurance: 10,000 times (data flash) 1,000 times (program ROM) • Program security: ROM code protect, ID code check • On-chip debug function • On-board flash rewrite function • Background operation (BGO) function Operating Frequency/ Supply Voltage f(XIN) = 20 MHz (VCC = 2.7 to 5.5 V) f(XIN) = 5 MHz (VCC = 1.8 to 5.5 V) Current Consumption Typ. 7 mA (VCC = 5.0 V, f(XIN) = 20 MHz) Typ. 3.6 mA (VCC = 3.0 V, f(XIN) = 10 MHz) Typ. 3.5 µA (VCC = 3.0 V, wait mode (f(XCIN) = 32 kHz)) Typ. 2 µA (VCC = 3.0 V, stop mode) Typ. 0.02 µA (VCC = 3.0 V, power-off mode) Operating Ambient Temperature -20 to 85 °C (N version) -40 to 85 °C (D version) (1) |
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