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IXFP110N15T2 датащи(PDF) 5 Page - IXYS Corporation

номер детали IXFP110N15T2
подробное описание детали  TrenchT2 HiperFET Power MOSFET
PDF  6 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFP110N15T2 датащи(HTML) 5 Page - IXYS Corporation

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IXFA110N15T2
IXFP110N15T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
14
15
16
17
18
19
20
55
60
65
70
75
80
85
90
95
100
105
110
ID - Amperes
RG = 3.3Ω
VGS = 10V
VDS = 75V
TJ = 25ºC
TJ = 125ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
40
80
120
160
200
240
280
2
4
6
8
10
12
14
16
18
20
RG - Ohms
20
30
40
50
60
70
80
90
t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 75V
I D = 55A
I D = 110A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
16
18
20
22
24
26
28
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
20
30
40
50
60
70
80
t f
td(off) - - - -
RG = 3.3Ω, VGS = 10V
VDS = 75V
I D = 55A, 110A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
17
18
19
20
21
22
23
55
60
65
70
75
80
85
90
95
100
105 110
ID - Amperes
20
30
40
50
60
70
80
t f
td(off) - - - -
RG = 3.3Ω, VGS = 10V
VDS = 75V
TJ = 125ºC
TJ = 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
12
13
14
15
16
17
18
19
20
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 3.3Ω
VGS = 10V
VDS = 75V
I D = 110A
I D = 55A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
2
4
6
8
10
12
14
16
18
20
RG - Ohms
10
50
90
130
170
210
250
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 75V
I D = 110A
I D = 55A



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