70592C datasheet(66/314 Pages) MICROCHIP

66 / 314 page

PIC24HJXXXGPX06A/X08A/X10A

DS70592C-page 66

5.4.1

PROGRAMMING ALGORITHM FOR

FLASH PROGRAM MEMORY

The user can program one row of program Flash

memory at a time. To do this, it is necessary to erase

the 8-row erase page that contains the desired row.

The general process is:

Read

eight

rows

program

memory

(512 instructions) and store in data RAM.

Update the program data in RAM with the

desired new data.

Erase the page (see Example 5-1):

a) Set the NVMOP bits (NVMCON<3:0>) to

‘0010’ to configure for block erase. Set the

ERASE (NVMCON<6>) and WREN

(NVMCON<14>) bits.

b) Write the starting address of the page to be

erased into the TBLPAG and W registers.

Perform a dummy table write operation

(TBLWTL) to any address within the page

that needs to be erased.

d) Write 0x55 to NVMKEY.

e) Write 0xAA to NVMKEY.

Set the WR bit (NVMCON<15>). The erase

cycle begins and the CPU stalls for the dura-

tion of the erase cycle. When the erase is

done, the WR bit is cleared automatically.

Write the first 64 instructions from data RAM into

the program memory buffers (see Example 5-2).

Write the program block to Flash memory:

a) Set the NVMOP bits to ‘0001’ to configure

for row programming. Clear the ERASE bit

and set the WREN bit.

b) Write 0x55 to NVMKEY.

Write 0xAA to NVMKEY.

Set the WR bit. The programming cycle

begins and the CPU stalls for the duration of

the write cycle. When the write to Flash mem-

ory is done, the WR bit is cleared

automatically.

Repeat steps 4 and 5, using the next available

64 instructions from the block in data RAM by

incrementing the value in TBLPAG, until all

512 instructions are written back to Flash memory.

For protection against accidental operations, the write

initiate sequence for NVMKEY must be used to allow

any erase or program operation to proceed. After the

programming command has been executed, the user

must wait for the programming time until programming

is complete. The two instructions following the start of

the programming sequence should be NOPs, as shown

in Example 5-3.

EXAMPLE 5-1:

ERASING A PROGRAM MEMORY PAGE

; Set up NVMCON for block erase operation

MOV

#0x4042, W0

;

MOV

W0, NVMCON

; Initialize NVMCON

; Init pointer to row to be ERASED

MOV

#tblpage(PROG_ADDR)

, W0

;

MOV

W0, TBLPAG

; Initialize PM Page Boundary SFR

MOV

#tbloffset(PROG_ADDR)

, W0

;

Initialize in-page EA<15:0> pointer

TBLWTL W0, [W0]

;

Set base address of erase block

DISI

; Block all interrupts with priority <7

; for next 5 instructions

MOV

#0x55, W0

MOV

W0, NVMKEY

; Write the 55 key

MOV

#0xAA, W1

;

MOV

W1, NVMKEY

; Write the AA key

BSET

NVMCON, #WR

;

Start the erase sequence

NOP

;

Insert two NOPs after the erase

NOP

; command is asserted

Note:

A program memory page erase operation

is set up by performing a dummy table

write (TBLWTL) operation to any address

within the page. This methodology is dif-

ferent from the page erase operation on

dsPIC30F/33F devices in which the erase

page was selected using a dedicated pair

of registers (NVMADRU and NVMADR).

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