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70592C датащи(PDF) 286 Page - Microchip Technology

номер детали 70592C
подробное описание детали  High-Performance, 16-bit Microcontrollers
PDF  314 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

70592C датащи(HTML) 286 Page - Microchip Technology

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PIC24HJXXXGPX06A/X08A/X10A
DS70592C-page 286
© 2011 Microchip Technology Inc.
25.1
High Temperature DC Characteristics
TABLE 25-1:
OPERATING MIPS VS. VOLTAGE
TABLE 25-2:
THERMAL OPERATING CONDITIONS
TABLE 25-3:
DC TEMPERATURE AND VOLTAGE SPECIFICATIONS
TABLE 25-4:
DC CHARACTERISTICS: POWER-DOWN CURRENT (IPD)
Characteristic
VDD Range
(in Volts)
Temperature Range
(in °C)
Max MIPS
PIC24HJXXXGPX06A/X08A/X10A
3.0V to 3.6V
-40°C to +150°C
20
Rating
Symbol
Min
Typ
Max
Unit
High Temperature Devices
Operating Junction Temperature Range
TJ
-40
—
+155
°C
Operating Ambient Temperature Range
TA
-40
—
+150
°C
Power Dissipation:
Internal chip power dissipation:
PINT = VDD x (IDD -
Σ IOH)
PD
PINT + PI/O
W
I/O Pin Power Dissipation:
I/O =
Σ ({VDD - VOH} x IOH) + Σ (VOL x IOL)
Maximum Allowed Power Dissipation
PDMAX
(TJ - TA)/
θJA
W
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature
-40°C
≤TA ≤+150°C for High Temperature
Parameter
No.
Symbol
Characteristic
Min
Typ
Max
Units
Conditions
Operating Voltage
HDC10
Supply Voltage
VDD
—
3.0
3.3
3.6
V
-40°C to +150°C
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature
-40°C
≤TA ≤+150°C for High Temperature
Parameter
No.
Typical
Max
Units
Conditions
Power-Down Current (IPD)
HDC60e
250
2000
μA
+150°C
3.3V
Base Power-Down Current(1,3)
HDC61c
3
5
μA
+150°C
3.3V
Watchdog Timer Current:
ΔIWDT(2,4)
Note 1: Base IPD is measured with all peripherals and clocks shut down. All I/Os are configured as inputs and
pulled to VSS. WDT, etc., are all switched off, and VREGS (RCON<8>) = 1.
2: The
Δ current is the additional current consumed when the module is enabled. This current should be
added to the base IPD current.
3: These currents are measured on the device containing the most memory in this family.
4: These parameters are characterized, but are not tested in manufacturing.



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