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SST25VF080B датащи(PDF) 24 Page - Microchip Technology |
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SST25VF080B датащи(HTML) 24 Page - Microchip Technology |
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24 / 36 page ![]() ©2011 Silicon Storage Technology, Inc. S71296-05-000 02/11 24 8 Mbit SPI Serial Flash SST25VF080B Data Sheet A Microchip Technology Company Table 11:DC Operating Characteristics (SST25VF080B-80-xx-xxxx) Symbol Parameter Limits Test Conditions Min Max Units IDDR Read Current 12 mA CE#=0.1 VDD/0.9 VDD@33 MHz, SO=open IDDR3 Read Current 20 mA CE#=0.1 VDD/0.9 VDD@80 MHz, SO=open IDDW Program and Erase Current 30 mA CE#=VDD ISB Standby Current 20 µA CE#=VDD,VIN=VDD or VSS ILI Input Leakage Current 1 µA VIN=GND to VDD,VDD=VDD Max ILO Output Leakage Current 1 µA VOUT=GND to VDD,VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VIH Input High Voltage 0.7 VDD VVDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOL2 Output Low Voltage 0.4 V IOL=1.6 mA, VDD=VDD Min VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min T11.0 1296 Table 12:Recommended System Power-up Timings Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. VDD Min to Read Operation 10 µs TPU-WRITE1 VDD Min to Write Operation 10 µs T12.0 1296 Table 13:Capacitance (TA = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum COUT1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Output Pin Capacitance VOUT =0V 12pF CIN1 Input Capacitance VIN =0V 6 pF T13.0 1296 Table 14:Reliability Characteristics Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T14.0 1296 |
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