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MCP4726 датащи(PDF) 4 Page - Microchip Technology |
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MCP4726 датащи(HTML) 4 Page - Microchip Technology |
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4 / 86 page ![]() MCP4706/4716/4726 DS22272A-page 4 © 2011 Microchip Technology Inc. ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, VDD = 2.7V to 5.5V, VSS = 0V, RL = 5 kΩ from VOUT to GND, CL = 100 pF, TA = -40°C to +125°C. Typical values at +25°C. Parameters Symbol Min Typical Max Units Conditions Power Requirements Input Voltage VDD 2.7 — 5.5 V Input Current IDD — 210 400 µA VREF1:VREF0 = ‘00’, SCL = SDA = VSS, VOUT is unloaded, volatile DAC Register = 0x000 — 210 400 µA VREF1:VREF0 = ‘11’, VREF = VDD, SCL = SDA = VSS, VOUT is unloaded, volatile DAC Register = 0x000 Power-Down Current IDDP — 0.09 2 µA PD1:PD0 = ‘01’ (Note 6), VOUT not connected Power-On Reset Threshold VPOR — 2.2 — V RAM retention voltage, (VRAM) < VPOR Power-Up Ramp Rate VRAMP 1— — V/S (Note 1, Note 4) Note 1: This parameter is ensured by design and is not 100% tested. 2: This gain error does not include offset error. See Section 2 for more details in plots. 3: Within 1/2 LSb of final value when code changes from 1/4 to 3/4 of FSR. (Example: 400h to C00h in 12- bit device). 4: The power-up ramp rate affects on uploading the EEPROM contents to the DAC register. It measures the rise of VDD over time. 5: This parameter is ensured by characterization, and not 100% tested. 6: The PD1:PD0 = ‘10’, and ‘11’ configurations should have the same current. 7: VDD = 5.5V. |
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