CMLDM8002A

CMLDM8002AG*

CMLDM8002AJ

SURFACE MOUNT

DUAL P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

DESCRIPTION:

These CENTRAL SEMICONDUCTOR devices are

dual chip Enhancement-mode P-Channel Field Effect

Transistors, manufactured by the P-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. The CMLDM8002A utilizes the USA

pinout configuration, while the CMLDM8002AJ, utilizing

the Japanese pinout configuration, is available as a

special order. These special Dual Transistor devices

offer Low rDS(on) and Low VDS(on).

MARKING CODES: CMLDM8002A:

C08

CMLDM8002AG*: CG8

CMLDM8002AJ: CJ8

* Device is Halogen Free by design

SOT-563 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

50

V

Drain-Gate Voltage

VDG

50

V

Gate-Source Voltage

VGS

20

V

Continuous Drain Current

ID

280

mA

Continuous Source Current (Body Diode)

IS

280

mA

Maximum Pulsed Drain Current

IDM

1.5

A

Maximum Pulsed Source Current

ISM

1.5

A

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IGSSF, IGSSR

VGS=20V, VDS=0

100

nA

IDSS

VDS=50V, VGS=0

1.0

μA

IDSS

VDS=50V, VGS=0, TJ=125°C

500

μA

ID(ON)

VGS=10V, VDS=10V

500

mA

BVDSS

VGS=0, ID=10μA

50

V

VGS(th)

VDS=VGS, ID=250μA

1.0

2.5

V

FEATURES:

• Dual Chip Device

• Low rDS(on)

• Low VDS(on)

• Low Threshold Voltage

• Fast Switching

• Logic Level Compatible

• Small SOT-563 package

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

R3 (18-January 2010)

www.centr a lsemi.com