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2SC4935 датащи(PDF) 3 Page - Toshiba Semiconductor |
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2SC4935 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC4935 2004-07-07 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Ambient temperature Ta (°C) PC – Ta Collector-emitter voltage VCE (V) Safe Operating Area 0 0 Common emitter Tc = 25°C 1 2 3 2 4 6 8 10 IB = 5 mA 50 40 30 25 20 15 10 1 0.01 0.01 0.1 1 10 0.1 Common emitter IC/IB = 10 100 Tc = −25°C 25 12 0 0 25 50 75 100 125 150 175 200 10 8 6 4 2 (1) Tc = Ta Infinite heat sink (2) No heat sink (1) (2) 10 0.05 1 0.1 1 10 3 5 30 50 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* IC max (continuous) DC operation Tc = 25°C 100 ms* 10 ms* t = 1 ms* 3 0 0 2.5 2 1.5 1 0.5 0.2 0.4 0.6 0.8 1 1.2 1.4 Common emitter VCE = 2 V −25 Tc = 100°C 25 1000 3 0.01 100 10 0.1 1 10 Common emitter VCE = 2 V −25 Tc = 100°C 25 30 300 |
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