2SC4935

2004-07-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC4935

Power Amplifier Applications

• Complementary to 2SA1869 and 5-watt-output applications.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

3

A

Base current

0.3

A

Ta = 25°C

2.0

Collector power

dissipation

Tc = 25°C

10

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

―

―

1.0

µA

Emitter cut-off current

―

―

1.0

µA

Collector-emitter breakdown voltage

50

―

―

V

(Note)

70

―

240

DC current gain

30

―

―

Collector-emitter saturation voltage

―

0.4

0.6

V

Base-emitter voltage

―

0.75

1.0

V

Transition frequency

―

80

―

MHz

Collector output capacitance

―

30

―

pF

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)