ZXTP25100CFH datasheet(4/8 Pages) DIODES

4 / 8 page

ZXTP25100CFH

Issue 2 - October 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown

voltage

BVCBO

-115

-180

IC = -100 A

Collector-emitter breakdown

voltage (base open)

BVCEO

-100

-140

IC = -10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

Emitter-base breakdown

voltage

BVEBO

-7

-8.4

IE = -100 A

Emitter-collector breakdown

voltage (reverse blocking)

BVECX

-7

-8.3

IE = -100 A, RBC < 1k or

-0.25 < VBC < 0.25V

Emitter-collector breakdown

voltage (base open)

BVECO

-7

-8.8

IE = -100 A

Collector-base cut-off current

ICBO

<-1

-50

VCB = -115V

-0.5

VCB = -115V, Tamb= 100°C

Collector emitter cut-off

current

ICEX

-100

VCE = -90V, RBE < 1k or

-0.25V < VBE < 1V

Emitter-base cut-off current

IEBO

<-1

-50

VEB = -5.6V

Collector-emitter saturation

voltage

VCE(sat)

-140

-210

IC = -100mA, IB = -1mA(*)

-80

-110

IC = -500mA, IB = -50mA(*)

-180

-310

IC = -500mA, IB = -20mA(*)

-150

-220

IC = -1A, IB = -100mA(*)

Base-emitter saturation

voltage

VBE(sat)

-845

-950

IC = -1A, IB = -100mA(*)

Base-emitter turn-on voltage

VBE(on)

-790

-900

IC = -1A, VCE = -2V(*)

Static forward current transfer

ratio

hFE

200

350

500

IC = -10mA, VCE = -2V(*)

180

320

IC = -100mA, VCE = -2V(*)

110

190

IC = -500mA, VCE = -2V(*)

IC = -1A, VCE = -2V(*)

Transition frequency

180

MHz

IC = -20mA, VCE = -15V

f = 100MHz

Output capacitance

Cobo

14.1

VCB = -10V, f = 1MHz(*)

Delay time

15.8

VCC = -10V.

IC = -500mA,

IB1 = IB2= -50mA.

Rise time

Storage time

411

Fall time

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